Method of processing a semiconductor device
US9023688B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2014 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Jun 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for processing a semiconductor device, the method including; providing a first semiconductor layer including first transistors; forming interconnection layers overlying the transistors, where the interconnection layers include copper or aluminum; forming a shielding heat conducting layer overlaying the interconnection layers; forming an isolation layer overlaying the shielding heat conducting layer; forming a second semiconductor layer overlying the isolation layer, and processing the second semiconductor layer at a temperature greater than about 400° C., where the interconnection layers are kept at a temperature below about 400° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.