Resistive random access memory (RRAM) structure and method of making the RRAM structure
US9023699B2 · kind B2 · utility
21Cited by
17References
20Claims
0Family size
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Key dates
| Filing date | Dec 20, 2012 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Jan 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
The present disclosure provides a resistive random access memory (RRAM) cell. The RRAM cell includes a transistor, a bottom electrode adjacent to a drain region of the transistor and coplanar with the gate, a resistive material layer on the bottom electrode, a top electrode on the resistive material layer, and a conductive material connecting the bottom electrode to the drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.