Method for forming conformal, homogeneous dielectric film by cyclic deposition and heat treatment
US9023737B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2013 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Jan 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02348
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a conformal, homogeneous dielectric film includes: forming a conformal dielectric film in trenches and/or holes of a substrate by cyclic deposition using a gas containing a silicon and a carbon, nitrogen, halogen, hydrogen, and/or oxygen, in the absence of a porogen gas; and heat-treating the conformal dielectric film and continuing the heat-treatment beyond a point where substantially all unwanted carbons are removed from the film and further continuing the heat-treatment to render substantially homogeneous film properties of a portion of the film deposited on side walls of the trenches and/or holes and a portion of the film deposited on top and bottom surfaces of the trenches and/or holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.