Film deposition method
US9023738B2 · kind B2 · utility
471Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2014 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Aug 13, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film deposition method, in which a film of a reaction product of a first reaction gas, which tends to be adsorbed onto hydroxyl radicals, and a second reaction gas capable of reacting with the first reaction gas is formed on a substrate provided with a concave portion, includes a step of controlling an adsorption distribution of the hydroxyl radicals in a depth direction in the concave portion of the substrate; a step of supplying the first reaction gas on the substrate onto which the hydroxyl radicals are adsorbed; and a step of supplying the second reaction gas on the substrate onto which the first reaction gas is adsorbed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.