Surface passivation by quantum exclusion using multiple layers
US9024344B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 8, 2013 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Mar 8, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes at least two doped layers fabricated using MBE methods. The dopant sheet densities in the doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. The electrically active dopant sheet densities are quite high, reaching more than 1×1014 cm−2, and locally exceeding 1022 per cubic centimeter. It has been found that silicon detector devices that have two or more such dopant layers exhibit improved resistance to degradation by UV radiation, at least at wavelengths of 193 nm, as compared to conventional silicon p-on-n devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.