Vertical transistor with dielectrically-isolated work-function metal electrodes surrounding the semiconductor pillar
US9024376B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2014 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Jan 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/517
Abstract
A semiconductor device includes a pillar-shaped semiconductor having an impurity concentration of 1017 cm−3 or less, a first insulator that surrounds the pillar-shaped semiconductor, a first metal that surrounds a portion of the first insulator at a first end of the pillar-shaped semiconductor, a second metal that surrounds a portion of the first insulator at the second end of the pillar-shaped semiconductor, a third metal that surrounds a portion of the first insulator in a region sandwiched between the first metal and the second metal, a second insulator formed between the first and third metals, a third insulator formed between the second and third metals, a fourth metal that connects the first metal and the one end, and a fifth metal that connects the second metal and the other end. The third metal has a work function of about 4.2 eV to about 5.0 eV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.