Semiconductor device with floating RESURF region

US9024380B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Weize Chen · Phoenix, US
• Richard J. De Souza · Tempe, US
• Patrice M. Parris · Phoenix, US

Key dates

• Filing date: Jun 21, 2012
• Grant date: May 5, 2015
• Expiry date: Nov 12, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/116

Abstract

A device includes a semiconductor substrate, a body region in the semiconductor substrate, having a first conductivity type, and including a channel region through which charge carriers flow, a drain region in the semiconductor substrate, having a second conductivity type, and spaced from the body region along a first lateral dimension, a drift region in the semiconductor substrate, having the second conductivity type, and electrically coupling the drain region to the channel region, and a plurality of floating reduced surface field (RESURF) regions in the semiconductor substrate adjacent the drift region, having the first conductivity type, and around which the charge carriers drift through the drift region under an electric field arising from a voltage applied to the drain region. Adjacent floating RESURF regions of the plurality of floating RESURF regions are spaced from one another along a second lateral dimension of the device by a respective gap.