Growth of large aluminum nitride single crystals with thermal-gradient control

US9028612B2 · kind B2 · utility

Assignee

• CRYSTAL IS, INC. · US

Inventors

• Robert T. Bondokov · Watervliet, US
• Shailaja P. Rao · Cohoes, US
• Shawn R. Gibb · Huntersville, US
• Leo J. Schowalter · Latham, US

Key dates

• Filing date: Jun 30, 2011
• Grant date: May 12, 2015
• Expiry date: Dec 20, 2033

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B29/403
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.