Oxygen monolayer on a semiconductor

US9028623B2 · kind B2 · utility

Assignee

• IMEC · BE

Inventors

• Annelies Delabie · Leuven, BE
• Matty Caymax · Leuven, BE

Key dates

• Filing date: Feb 20, 2014
• Grant date: May 12, 2015
• Expiry date: Feb 20, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/306
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A Si or Ge semi-conductor substrate includes an oxygen monolayer on a surface thereof. The oxygen monolayer can be fractional or complete. A Si4+ or Ge4+ oxidation state of the surface of the Si or Ge substrate, respectively, resulting from the presence of the oxygen monolayer represents less than 50%, preferably less than 40% and more preferably less than 30% of the sum of Si1+, Si2+, Si3+ and Si4+ oxidation states or the sum of Ge1+, Ge2+, Ge3+ and Ge4+ oxidation states, respectively, as measured by XPS.