Wafer-to-wafer oxide fusion bonding
US9028628B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2013 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | Aug 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67092
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Oxide-oxide fusion bonding of wafers that includes performing a van der Waals force bonding process with a chuck having at least a flat central zone and an outer annular zone lower than the central zone, an edge portion of a mounted wafer is biased towards the outer annular zone. The van der Waals bonding wave is disrupted at the outer annular zone, causing an edge gap. A thermocompression bonding process is performed that includes heating the bonded wafers to a temperature sufficient to initiate condensation of silanol groups between the bonding surfaces, reducing the atmospheric pressure to cause degassing from between the wafers, applying a compression force to the wafers with flat chucks so as to substantially eliminate the edge gap, and performing a permanent anneal bonding process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.