Process for removing a bulk material layer from a substrate and a chemical mechanical polishing agent suitable for this process

US9028708B2 · kind B2 · utility

Assignee

• BASF SE

Inventors

• Vijay Immanuel Raman · Mannheim, DE
• Yuzhuo Li
• Mario Brands · Ludwigshafen, DE
• Yongqing Lan · Potsdam, US
• Kenneth Rushing · Ludwigshafen, DE
• Karpagavalli Ramji · Chicago, US

Key dates

• Filing date: Nov 25, 2010
• Grant date: May 12, 2015
• Expiry date: Jun 12, 2031

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C09K3/1463
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

An aqueous chemical mechanical polishing (CMP) agent (A) comprising solid particles (a1) containing (a11) a corrosion inhibitor for metals, and (a12) a solid material, the said solid particles (a1) being finely dispersed in the aqueous phase; and its use in a process for removing a bulk material layer from the surface of a substrate and planarizing the exposed surface by chemical mechanical polishing until all material residuals are removed from the exposed surface, wherein the CMP agent exhibits at the end of the chemical mechanical polishing, without the addition of supplementary materials, —the same or essentially the same static etch rate (SER) as at its start and a lower material removal rate (MRR) than at its start, —a lower SER than at its start and the same or essentially the same MRR as at its start or—a lower SER and a lower MRR than at its start; such that the CMP agent exhibits a soft landing behavior.