Optoelectronic semiconductor chip and method for fabrication thereof

US9029177B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Rainer Butendeich · Regensburg, DE
• Alexander Walter · Hemau, DE
• Matthias Peter · Orpund, CH
• Tobias Meyer · Durham, US
• Tetsuya Taki · Miyoshi, JP
• Hubert Maiwald · Neutraubling, DE

Key dates

• Filing date: Dec 23, 2010
• Grant date: May 12, 2015
• Expiry date: Jul 30, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/821

Abstract

An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.