Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same
US9029253B2 · kind B2 · utility
514Cited by
160References
11Claims
0Family size
Assignee
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Key dates
| Filing date | May 1, 2013 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | May 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Nitrogen-containing phase-stabilized films, methods of forming phase-stabilized films, and structures and devices including the phase-stabilized films are disclosed. The phase-stabilized films include a matrix material and a phase stabilizer, which provides a morphologically stabilizing effect to a matrix material within the films. The phase-stabilized films may be used as, for example, gate electrodes and similar films in microelectronic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.