Multilayered microbolometer film deposition
US9029783B2 · kind B2 · utility
3Cited by
6References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2011 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | Nov 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/809
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A microbolometer is disclosed, including a bottom multilayered dielectric, having a first silicon oxynitride layer and a second silicon oxynitride layer disposed above the first silicon oxynitride layer, the first and second silicon oxynitride layers having different refractive indices. The microbolometer further includes a detector layer disposed above the bottom multilayered dielectric, the detector layer comprised of a temperature sensitive resistive material, and a top dielectric disposed above the detector layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.