Semiconductor device and manufacturing method for semiconductor device
US9029825B2 · kind B2 · utility
7Cited by
1References
18Claims
0Family size
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Key dates
| Filing date | Jun 14, 2011 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | Aug 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes multilayer interconnects and two variable resistance elements (22a, 22b) that are provided among the multilayer interconnects and that include first electrodes (5), second electrodes (10a, 10b), and variable resistance element films (9a, 9b) that are each interposed between first electrodes (5) and respective second electrodes (10a, 10b). Either the first electrodes (5) or the second electrodes (10a, 10b) of the two variable resistance elements (22a, 22b) are unified.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.