Layout for reticle and wafer scanning electron microscope registration or overlay measurements

US9029855B2 · kind B2 · utility

Assignee

• GlobalFoundries Singapore Pte. Ltd. · SG

Inventors

• Guo Xiang Ning · Ballston Lake, US
• Carsten Hartig · Meerane, DE
• Paul Ackmann · Gansevoort, US
• Fanghong Gn · Singapore, SG

Key dates

• Filing date: Mar 15, 2013
• Grant date: May 12, 2015
• Expiry date: Mar 15, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method and a resulting device are provided for forming stack overlay and registration monitoring structures for FEOL layers including implant layers and for forming BEOL SEM overlay and registration monitoring structures including BEOL interconnections, respectively. Embodiments include forming an active monitoring structure having first and second edges separated by a first distance in an active layer on a semiconductor substrate; forming a poly monitoring structure having first and second edges separated by a second distance in a poly layer; and forming one or more contact monitoring structures in a contact layer, collectively exposing at least the first and second edges of each of the active and poly monitoring structures; wherein the active, poly, and contact monitoring structures are formed in an area which includes no IC patterns in the active, the poly, and the contact layers, respectively.