Thin film transistor and shift register
US9029861B2 · kind B2 · utility
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Key dates
| Filing date | May 20, 2011 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | Oct 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
Abstract
Thin film transistors having a high current drive capability and a suitable threshold voltage are provided. The thin film transistor includes a gate electrode, an insulating layer formed on the gate electrode, a semiconductor layer formed on the insulating layer, and source/drain electrodes formed on the semiconductor layer. The semiconductor layer includes a plurality of regions separated from each other in a longitudinal direction of the source/drain electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.