Semiconductor device
US9029871B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2012 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | Nov 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first semiconductor layer surrounding a bottom of the trench gate, a second semiconductor layer disposed along one of end portions of the trench gate in a longitudinal direction of the trench gate, one of end portions of the second semiconductor layer contacting the body layer and the other of the end portions of the second semiconductor layer contacting the first semiconductor layer, and a connecting layer, one of end portions of the connecting layer being connected to the body layer and the other of the end portions of the connecting layer being connected to the first semiconductor layer, the connecting layer contacting the second semiconductor layer, and the connecting layer being separated from the one of the end portions of the trench gate in the longitudinal direction of the trench gate by the second semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.