Group III-nitride-based transistor with gate dielectric including a fluoride -or chloride- based compound

US9029914B2 · kind B2 · utility

Assignee

• TriQuint Semiconductor, Inc. · US

Inventors

• Edward A. Beam, III · Dallas, US
• Paul Saunier · Garland, US

Key dates

• Filing date: Nov 26, 2012
• Grant date: May 12, 2015
• Expiry date: Feb 1, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/511

Abstract

Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device may include a buffer layer disposed on a substrate, the buffer layer including gallium (Ga) and nitrogen (N) and a barrier layer disposed on the buffer layer, the barrier layer including aluminum (Al) and nitrogen (N). The IC device may further include a gate terminal and a gate dielectric layer disposed between the gate terminal and the barrier layer and/or between the gate terminal and the buffer layer. In various embodiments, the gate dielectric layer may include a fluoride- or chloride-based compound, such as calcium fluoride (CaF2).