Semiconductor device
US9029923B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2014 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | Aug 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/665
Abstract
A semiconductor device includes a fin-shaped silicon layer and a pillar-shaped silicon layer on the fin-shaped silicon layer, where a width of the pillar-shaped silicon layer is equal to a width of the fin-shaped silicon layer. Diffusion layers reside in upper portions of the pillar-shaped silicon layer and fin-shaped silicon layer and in a lower portion of the pillar-shaped silicon layer to form. A gate insulating film and a metal gate electrode are around the pillar-shaped silicon layer and a metal gate line extends in a direction perpendicular to the fin-shaped silicon layer and is connected to the metal gate electrode. A contact resides on the metal gate line and a nitride film is on an entire top surface of the metal gate electrode and the metal gate line, except for the bottom of the contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.