Programmable device with improved coupling ratio through trench capacitor and lightly doped drain formation
US9029932B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Aug 27, 2013 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | Aug 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/10
Abstract
A programmable device and a method of manufacturing the same are provided. A programmable device comprises a substrate having a source region, a drain region and a diffusion region adjacent to the source region and the drain region; a channel coupling the source region and the drain region; a floating gate formed of a conductive material and positioned on the substrate and corresponding to the channel; and a trench formed in the diffusion region at the substrate, wherein the floating gate extends to the trench, and the conductive material covers a sidewall of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.