Semiconductor structure and method of manufacturing the same
US9029952B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2012 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | Aug 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/112
Abstract
A semiconductor structure includes a substrate, a first well having a first conductive type, a second well having a second conductive type, a body region, a first doped region, a second doped region, a third doped region and a field plate. The first and second wells are formed in the substrate. The body region is formed in the second well. The first and second doped regions are formed in the first well and the body region, respectively. The second and first doped regions have the same polarities, and the dopant concentration of the second doped region is higher than that of the first doped region. The third doped region is formed in the second well and located between the first and second doped regions. The third and first doped regions have reverse polarities. The field plate is formed on the surface region between the first and second doped regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.