FinFETs and the methods for forming the same
US9029958B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2013 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | Jul 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
Abstract
A method includes forming a gate stack including a gate electrode on a first semiconductor fin. The gate electrode includes a portion over and aligned to a middle portion of the first semiconductor fin. A second semiconductor fin is on a side of the gate electrode, and does not extend to under the gate electrode. The first and the second semiconductor fins are spaced apart from, and parallel to, each other. An end portion of the first semiconductor fin and the second semiconductor fin are etched. An epitaxy is performed to form an epitaxy region, which includes a first portion extending into a first space left by the etched first end portion of the first semiconductor fin, and a second portion extending into a second space left by the etched second semiconductor fin. A first source/drain region is formed in the epitaxy region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.