Semiconductor device and method of fabricating the same
US9029976B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2013 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | Dec 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/107
Abstract
Provided is a semiconductor device which increases a concentration around an emitter by arranging a lightly doped region (HNMLDD). When the semiconductor device is operated in a forward bias, a maximum common-emitter current gain is obtained in a forward-active region, such that signals are amplified and an unnecessary noise is decreased at the same time. Further, the semiconductor device of the invention further includes a field plate disposed on a substrate between the emitter and a base or/and the collector and the base, and configured to change a potential distribution of junctions between each of doped regions and raise a breakdown voltage of the junctions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.