4h-SiC semiconductor element and semiconductor device
US9029979B2 · kind B2 · utility
3Cited by
5References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2012 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | May 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench groove is formed and a silicon oxide film is buried in the periphery of a channel region of (0001) surface 4h-SiC semiconductor element. The oxide film in the trench groove is defined in such a planar layout that a tensile strain is applied along the direction of the c-axis and a compressive strain is applied along two or more of axes on a plane perpendicular to the c-axis. For example, trench grooves buried with an oxide film may be configured to such a layout that they are in a trigonal shape surrounding the channel, or are arranged symmetrically with respect to the channel as a center when arranged discretely.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.