Semiconductor device and structure
US9030858B2 · kind B2 · utility
3Cited by
349References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2012 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | May 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device, including: a first semiconductor layer including first transistors, wherein the first transistors are interconnected by at least one metal layer including aluminum or copper; and a second mono-crystallized semiconductor layer including second transistors and overlaying the at least one metal layer, wherein the at least one metal layer is in-between the first semiconductor layer and the second mono-crystallized semiconductor layer, wherein the second mono-crystallized semiconductor layer is less than 100 nm in thickness, and wherein the second transistors include horizontally oriented transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.