Nonvolatile semiconductor memory device
US9030881B2 · kind B2 · utility
15Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2013 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | Aug 22, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0483
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a nonvolatile semiconductor memory device comprises memory cells each which stores data with two or more levels. Each of the memory cells includes a semiconductor layer, a first insulating layer on the semiconductor layer, a charge storage layer on the first insulating layer, a second insulating layer on the charge storage layer, and a control gate electrode on the second insulating layer, and the second insulating layer includes a ferroelectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.