Patent · US Active

Method of processing a substrate

US9034233B2 · kind B2 · utility

0Cited by

12References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Joerg Ortner · Finkenstein, AT
Michael Sorger · Villach, AT

Key dates

Filing date	Nov 30, 2010
Grant date	May 19, 2015
Priority date	—
Expiry date	Apr 17, 2032

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/887
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In a method of processing a substrate in accordance with an embodiment, a trench may be formed in the substrate, imprint material may be deposited at least into the trench, the imprint material in the trench may be embossed using a stamp device, and the stamp device may be removed from the trench.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.