Method of forming semiconductor device
US9034705B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2013 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | Jun 28, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/938
Abstract
A method of forming a semiconductor device is disclosed. At least one gate structure is provided on a substrate, wherein the gate structure includes a first spacer formed on a sidewall of a gate. A first disposable spacer material layer is deposited on the substrate covering the gate structure. The first disposable spacer material layer is etched to form a first disposable spacer on the first spacer. A second disposable spacer material layer is deposited on the substrate covering the gate structure. The second disposable spacer material layer is etched to form a second disposable spacer on the first disposable spacer. A portion of the substrate is removed, by using the first and second disposable spacers as a mask, so as to form two recesses in the substrate beside the gate structure. A stress-inducing layer is formed in the recesses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.