Method for implant productivity enhancement

US9034743B2 · kind B2 · utility

Assignee

• Varian Semiconductor Equipment Associates, Inc. · US

Inventors

• Peter F. Kurunczi · Cambridge, US
• Bon-Woong Koo · Andover, US
• John A. Frontiero · Rockport, US
• William T. Levay · Rockport, US
• Christopher J. Leavitt · Gloucester, US
• Timothy J. Miller · Ipswich, US
• Vikram M. Bhosle · North Reading, US
• John W. Graff · Watertown, US
• Nicholas PT Bateman · Reading, US

Key dates

• Filing date: Nov 26, 2013
• Grant date: May 19, 2015
• Expiry date: Nov 26, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/31701
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

A method of processing a workpiece is disclosed, where the ion chamber is first coated with the desired dopant species and another species. Following this conditioning process, a feedgas, which comprises fluorine and the desired dopant, is introduced to the chamber and ionized. Ions are then extracted from the chamber and accelerated toward the workpiece, where they are implanted without being first mass analyzed. The other species used during the conditioning process may be a Group 3, 4 or 5 element. The desired dopant species may be boron.