Coalesced nanowire structures with interstitial voids and method for manufacturing the same

US9035278B2 · kind B2 · utility

Assignee

• GLO AB · SE

Inventors

• Patrik Svensson · Palo Alto, US
• Linda Romano · Sunnyvale, US
• Sungsoo Yi · Sunnyvale, US
• Olga Kryliouk · Gainesville, US
• Ying-Lan Chang · Cupertino, US

Key dates

• Filing date: Sep 25, 2012
• Grant date: May 19, 2015
• Expiry date: Mar 17, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/813

Abstract

A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer.