Trench gate MOSFET

US9035283B2 · kind B2 · utility

Assignee

• UBIQ Semiconductor Corp. · TW

Inventors

• Chien-Ling Chan · Baoshan, TW
• Chi-Hsiang Lee · Wang'an Town, TW

Key dates

• Filing date: Mar 8, 2013
• Grant date: May 19, 2015
• Expiry date: Mar 8, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

A trench gate MOSFET is provided. An epitaxial layer is disposed on a substrate. A body layer is disposed in the epitaxial layer. The epitaxial layer has a first trench therein, the body layer has a second trench therein, and the first trench is disposed below the second trench. A first conductive layer is disposed in the first trench. A first insulating layer is disposed between the first conductive layer and the epitaxial layer. A second conductive layer is disposed on a sidewall of the second trench. A second insulating layer is disposed between the second conductive layer and the body layer, and between the second conductive layer and the first conductive layer. A dielectric layer is disposed on the epitaxial layer and fills up the second trench. Two doped regions are disposed in the body layer respectively beside the second trench.