Semiconductor device and method for manufacturing same
US9035303B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2013 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | Apr 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
This semiconductor device (100A) includes: a gate electrode (3) formed on a substrate (2); a gate insulating layer (4) formed on the gate electrode; an oxide layer (50) which is formed on the gate insulating layer and which includes a semiconductor region (51) and a conductor region (55); source and drain electrodes (6s, 6d) electrically connected to the semiconductor region; a protective layer (11) formed on the source and drain electrodes; and a transparent electrode (9) formed on the protective layer. At least part of the transparent electrode overlaps with the conductor region with the protective layer interposed between them. The upper surface of the conductor region contacts with a reducing insulating layer (61) with the property of reducing an oxide semiconductor included in the oxide layer. The reducing insulating layer is out of contact with the channel region of the semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.