Bidirectional semiconductor device for protection against electrostatic discharges, usable on silicon on insulator
US9035349B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2013 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | Apr 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/713
Abstract
A device includes, within a layer of silicon on insulator, a central semiconductor zone including a central region having a first type of conductivity, two intermediate regions having a second type of conductivity opposite to that of the first one, respectively disposed on either side of and in contact with the central region in order to form two PN junctions, two semiconductor end zones respectively disposed on either side of the central zone, each end zone comprising two end regions of opposite types of conductivity, in contact with the adjacent intermediate region, the two end regions of each end zone being mutually connected electrically in order to form the two terminals of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.