Semiconductor structure and method for manufacturing the same
US9035386B2 · kind B2 · utility
4Cited by
2References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 21, 2012 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | Dec 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a first doped region, a second doped region, and a gate structure. The first doped region has a first type conductivity. The second doped region is formed in the first doped region and has a second type conductivity opposite to the first type conductivity. The gate structure is formed on the first doped region and the second doped region. The gate structure comprises a first gate portion and a second gate portion, which are separated from each other by a gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.