Non-polar gallium nitride thin films grown by metalorganic chemical vapor deposition
US9039834B2 · kind B2 · utility
1Cited by
58References
13Claims
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Key dates
| Filing date | Jun 2, 2011 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Jun 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02647
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Non-polar (11 20) a-plane gallium nitride (GaN) films with planar surfaces are grown on (1 102) r-plane sapphire substrates by employing a low temperature nucleation layer as a buffer layer prior to a high temperature growth of the non-polar (11 20) a-plane GaN thin films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.