Methods for achieving width control in etching processes
US9040317B2 · kind B2 · utility
2Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2012 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Mar 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes performing a patterning step on a layer using a process gas. When the patterning step is performed, a signal strength is monitored, wherein the signal strength is from an emission spectrum of a compound generated from the patterning step. The compound includes an element in the patterned layer. At a time the signal strength is reduced to a pre-determined threshold value, the patterning step is stopped.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.