Patent · US Active

Method for manufacturing a cap for a MEMS component, and hybrid integrated component having such a cap

US9040336B2 · kind B2 · utility

0Cited by
2References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 21, 2013
Grant dateMay 26, 2015
Priority date
Expiry dateOct 21, 2033

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81B7/0058
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A manufacturing method for a cap, for a hybrid vertically integrated component having a MEMS component a relatively large cavern volume having a low cavern internal pressure, and a reliable overload protection for the micromechanical structure of the MEMS component. A cap structure is produced in a flat cap substrate in a multistep anisotropic etching, and includes at least one mounting frame having at least one mounting surface and a stop structure, on the cap inner side, having at least one stop surface, the surface of the cap substrate being masked for the multistep anisotropic etching with at least two masking layers made of different materials, and the layouts of the masking layers and the number and duration of the etching steps being selected so that the mounting surface, the stop surface, and the cap inner side are situated at different surface levels of the cap structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.