Method for varied topographic MEMS cap process
US9040386B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2013 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Dec 27, 2033 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C1/00269
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A device includes sidewalls formed in a wafer surface, where the sidewalls descend to a recessed surface. The recessed surface generally promotes resist coverage on the wafer surface, including corners (e.g., junctions between the wafer surface and various surface topographies, such as cavities, the recessed surface, and so forth) on the wafer. In one or more implementations, a wet etching procedure is used to form the sidewalls and recessed surface. A resist material (e.g., a photoresist material) is deposited onto the wafer surface, where the photoresist fully covers one or more of the top corners of the wafer surface. In one or more implementations, the recessed surface is positioned adjacent a trench formed in the wafer to promote resist coverage on the top surface of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.