Method for manufacturing semiconductor device
US9040423B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2013 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Jul 17, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device is provided. A substrate having a first area with a first poly layer and a second area with a second poly layer is provided. A nitride HM film is then deposited above the first poly layer of a first device in the first area and above the second poly layer in the second area. Afterwards, a first patterned passivation is formed on the nitride HM film in the first area to cover the nitride HM film and the first device, and a second patterned passivation is formed above the second poly layer in the second area. The second poly layer in the second area is defined by the second patterned passivation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.