Charge sensors using inverted lateral bipolar junction transistors
US9040929B2 · kind B2 · utility
4Cited by
18References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2012 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Jul 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/197
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensor includes a collector, an emitter and a base-region barrier formed as an inverted bipolar junction transistor having a base substrate forming a base electrode to activate the inverted bipolar junction transistor. A level surface is formed by the collector, the emitter and the base-region barrier opposite the base substrate such that when the level surface is exposed to charge, the charge is measured during operation of the bipolar junction transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.