Patent · US Active

Nanoscale switching device

US9040948B2 · kind B2 · utility

8Cited by
2References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 16, 2010
Grant dateMay 26, 2015
Priority date
Expiry dateSep 16, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N70/884

Abstract

A nanoscale switching device comprises a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the active region containing a switching material; an area within the active region that constrains current flow between the first electrode and the second electrode to a central portion of the active region; and an interlayer dielectric layer formed of a dielectric material and disposed between the first and second electrodes outside the active region. A nanoscale crossbar array and method of forming the nanoscale switching device are also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.