Image sensors having buried light shields with antireflective coating
US9041081B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 12, 2013 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Dec 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8067
Abstract
An image sensor with an array of image sensor pixels is provided. Each image pixel may include a photodiode and associated pixel circuits formed in a semiconductor substrate. Buried light shielding structures may be formed on the substrate to prevent pixel circuitry that is formed in the substrate between two adjacent photodiodes from being exposed to incoming light. The buried light shielding structures may be lined with absorptive antireflective coating material to prevent light from being reflected off the surface of the buried light shielding structures. Forming buried light shielding structures with absorptive antireflective coating material can help reduce optical pixel crosstalk and enhance global shutter efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.