Engineering multiple threshold voltages in an integrated circuit

US9041082B2 · kind B2 · utility

Assignees

• International Business Machines Corporation · US
• CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE · FR

Inventors

• Catherine A. Dubourdieu · New York, US
• Martin M. Frank · Dobbs Ferry, US
• Vijay Narayanan · New York, US

Key dates

• Filing date: Oct 7, 2010
• Grant date: May 26, 2015
• Expiry date: Oct 23, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/83

Abstract

An integrated circuit and method for forming an integrated circuit. There are at least three field-effect transistors with at least two of the field-effect transistors having the same electrically insulating material which is ferroelectric when unstrained or is capable of being ferroelectric when strain is induced. It is optional for the third field-effect transistor to have an electrically insulating material which is ferroelectric when unstrained or is capable of being ferroelectric when strain is induced. The at least three field-effect transistors are strained to varying amounts so that each of the three field-effect transistors has a threshold voltage, Vt, which is different from the Vt of the two other field-effect transistors.