Non-volatile memory devices having air gaps and methods of manufacturing the same
US9041088B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2014 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Jul 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are non-volatile memory devices and methods of manufacturing the same. The non-volatile memory device includes device isolation patterns defining active portions in a substrate and gate structures disposed on the substrate. The active portions are spaced apart from each other in a first direction and extend in a second direction perpendicular to the first direction. The gate structures are spaced apart from each other in the second direction and extend in the first direction. Each of the device isolation patterns includes a first air gap, and each of a top surface and a bottom surface of the first air gap has a wave-shape in a cross-sectional view taken along the second direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.