Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substrates
US9041106B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2012 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Jul 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6219
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substrates are described. For example, a semiconductor device includes a semiconductor substrate. An insulating structure is disposed above the semiconductor substrate. A three-dimensional germanium-containing body is disposed on a semiconductor release layer disposed on the insulating structure. The three-dimensional germanium-containing body includes a channel region and source/drain regions on either side of the channel region. The semiconductor release layer is under the source/drain regions but not under the channel region. The semiconductor release layer is composed of a semiconductor material different from the three-dimensional germanium-containing body. A gate electrode stack surrounds the channel region with a portion disposed on the insulating structure and laterally adjacent to the semiconductor release layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.