FinFET device technology with LDMOS structures for high voltage operations

US9041127B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• John B. Campi, Jr. · Colchester, US
• Robert J. Gauthier, Jr. · South Burlington, US
• Junjun Li · Williston, US
• Rahul Mishra · South Burlington, US
• Souvick Mitra · South Burlington, US
• Mujahid Muhammad · South Burlington, US

Key dates

• Filing date: May 14, 2013
• Grant date: May 26, 2015
• Expiry date: Jul 10, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/834

Abstract

The present invention is a finFET type semiconductor device using LDMOS features. The device includes a first portion of a substrate doped with a second doping type and has a first trench, second trench, and first fin. The second portion of the substrate with a first doping type includes a third trench and second fin. The second fin between the second and third trench covers a part the first portion and a part of the second portion of the substrate. A first segment of the second fin is between the second segment and second trench. A second segment covers a part of the second portion of the substrate and is between the first segment and third trench. A gate covering at least a part of the first segment and a part of the first portion and a part of the second portion of the substrate.