Semiconductor device and operating method for the same
US9041142B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2012 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Jan 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/411
Abstract
A semiconductor device and an operating method for the same are provided. The semiconductor structure comprises a first doped region, a second doped region, a third doped region, a fourth doped region and a first gate structure. The first doped region has a first type conductivity. The second doped region has a second type conductivity opposite to the first type conductivity. The first doped region is surrounded by the second doped region. The third doped region has the first type conductivity. The fourth doped region has the second type conductivity. The first gate structure is on the second doped region. The third doped region and the fourth doped region are in the second doped region and the first doped region on opposing sides of the first gate structure respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.