Photonic device structure and fabrication method thereof
US9042417B2 · kind B2 · utility
1Cited by
3References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2013 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Nov 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2205
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Various embodiments of a photonic device and fabrication method thereof are provided. In one aspect, a device includes a substrate, a current confinement layer disposed on the substrate, an absorption layer disposed in the current confinement layer, and an electrical contact layer disposed on the absorption layer. The current confinement layer is doped in a pattern and configured to reduce dark current in the device. The photonic device may be a photodiode or a laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.