Low-E panels with ternary metal oxide dielectric layer and method for forming the same

US9045363B2 · kind B2 · utility

Assignees

• INTERMOLECULAR, INC. · US
• Guardian Industries Corp. · US

Inventors

• Mohd Fadzli Anwar Hassan · San Francisco, US
• Richard Blacker · Farmington Hills, US
• Guowen Ding · San Jose, US
• Jingyu Lao · Saline, US
• Hien Minh Le · San Jose, US
• Yiwei Lu · Ann Arbor, US
• Minh Anh Nguyen · San Jose, US
• Zhi-Wen Sun · Sunnyvale, US

Key dates

• Filing date: Dec 27, 2011
• Grant date: Jun 2, 2015
• Expiry date: Feb 26, 2033

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C03C2217/281
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxide layer is formed over the transparent substrate. The metal oxide layer includes a first element, a second element, and a third element. A reflective layer is formed over the transparent substrate. The first element may include tin or zinc. The second element and the third element may each include tin, zinc, antimony, silicon, strontium, titanium, niobium, zirconium, magnesium, aluminum, yttrium, lanthanum, hafnium, or bismuth. The metal oxide layer may also include nitrogen.